Title:
PATTERNING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/040701
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors. Provided is a patterning method, which is used for ameliorating the problem of an odd-even effect in a multi-patterning process. The patterning method comprises: providing a substrate; forming a first mask layer on the substrate; patterning the first mask layer to form a plurality of first mandrel structures, wherein a first trench is provided between two adjacent first mandrel structures, and each first mandrel structure comprises a compensation layer and a first hard mask layer; forming a sacrificial material layer, wherein the sacrificial material layer forms a second trench in the first trench by means of enclosure; forming a second hard mask material layer at least filling the second trench; etching back the second hard mask material layer and the sacrificial material layer to form a plurality of second mandrel structures, wherein each second mandrel structure comprises a second sacrificial layer and a second hard mask layer; and removing a first sacrificial layer, and patterning the substrate by using the first mandrel structures and the second mandrel structures as masks. The present disclosure can mitigate or avoid the problem of an odd-even effect that is present when a target pattern is formed in the substrate.
Inventors:
ZHUO YUE (CN)
Application Number:
PCT/CN2022/124238
Publication Date:
February 29, 2024
Filing Date:
October 10, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/308
Foreign References:
| US20190341252A1 | 2019-11-07 | |||
| US20150087149A1 | 2015-03-26 | |||
| US20150064906A1 | 2015-03-05 | |||
| US20140065812A1 | 2014-03-06 | |||
| US20190206725A1 | 2019-07-04 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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