PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND METHOD FOR MANUFACTURING SAME

Title:

PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2023/101330

Kind Code:

A1

Abstract:

Disclosed are: a pellicle for EUV lithography, which simultaneously satisfies the high transmittance and mechanical strength of crystalline silicon and can be manufactured in a large area; and a method for manufacturing same. The pellicle for EUV lithography comprises a pellicle film through which EUV rays transmit and a support frame for supporting the pellicle film, wherein the pellicle film has a multilayer thin film structure in which a micrometer-sized crystalline silicon (c-Si) layer with no grain boundary and a graphene thin film are heterojunctioned.

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Inventors:

KIM YONG HWAN (KR)

Application Number:

PCT/KR2022/018831

Publication Date:

June 08, 2023

Filing Date:

November 25, 2022

Export Citation:

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Assignee:

INFOVION INC (KR)

International Classes:

G03F1/62; C01B32/184; C30B29/06; C30B30/02

Foreign References:

KR20210107945A	2021-09-02
KR20190045261A	2019-05-02
KR20160145661A	2016-12-20
JP2000066376A	2000-03-03
US20050025959A1	2005-02-03

Attorney, Agent or Firm:

KIM, Byeong Pil (KR)

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