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Title:
PELLICLE
Document Type and Number:
WIPO Patent Application WO/2017/179199
Kind Code:
A1
Abstract:
The present invention provides a pellicle enabling to achieve high qualities of semiconductor patterns, and long service-lives of pellicles and masks. According to an embodiment of the present invention, an EUV pellicle is provided on an EUV mask, and an outer side surface of a pellicle film (02) is provided with a low-reflection layer (06) having a reflectance that is lower than that of the pellicle film (02) with respect to out-of-band light included in an EUV light source.

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Inventors:
FUKUGAMI NORIHITO (JP)
Application Number:
PCT/JP2016/062141
Publication Date:
October 19, 2017
Filing Date:
April 15, 2016
Export Citation:
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Assignee:
TOPPAN PRINTING CO LTD (JP)
International Classes:
G03F1/62; G03F1/24
Domestic Patent References:
WO2016043301A12016-03-24
WO2015182482A12015-12-03
WO2015178250A12015-11-26
Foreign References:
JP2015523714A2015-08-13
JP2001194506A2001-07-19
JP2016080967A2016-05-16
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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