Title:
PHASE CHANGE CHANNEL TRANSISTOR AND METHOD FOR DRIVING SAME
Document Type and Number:
WIPO Patent Application WO/2014/128990
Kind Code:
A1
Abstract:
This phase change channel transistor comprises: a channel layer which contains a phase change material that undergoes a topological phase transition by the application of an electric field; a source electrode and a drain electrode, which are connected to the channel layer; an insulating film which is formed on a first surface of the channel layer; a first gate electrode which is formed on the insulating film; and a second gate electrode which is formed on a second surface of the channel layer between the source electrode and the drain electrode.
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Inventors:
ITO MASAKATSU (JP)
FONS PAUL (JP)
OTA HIROYUKI (JP)
MORITA YUKINORI (JP)
MIGITA SHINJI (JP)
TOMINAGA JUNJI (JP)
FONS PAUL (JP)
OTA HIROYUKI (JP)
MORITA YUKINORI (JP)
MIGITA SHINJI (JP)
TOMINAGA JUNJI (JP)
Application Number:
PCT/JP2013/070449
Publication Date:
August 28, 2014
Filing Date:
July 29, 2013
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
H01L21/337; H01L21/336; H01L21/338; H01L29/12; H01L29/66; H01L29/786; H01L29/808; H01L29/812; H01L45/00
Foreign References:
| JP2008098638A | 2008-04-24 |
Other References:
YONG WANG ET AL.: "Gate-Controlled Surface Conduction in Na-Doped Bi2Te3 Topological Insulator Nanoplates", NANO LETTERS, vol. 12, pages 1170 - 1175
Attorney, Agent or Firm:
KITANO, Yoshihito (JP)
Kitano Yoshito (JP)
Kitano Yoshito (JP)
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