Title:
PHASE-CHANGE MEMORY CELL, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE AND PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/257935
Kind Code:
A1
Abstract:
The present application belongs to the technical field of semiconductor storage. Disclosed are a phase-change memory cell, a phase-change memory, an electronic device and a preparation method. The phase-change memory cell comprises: a phase-change thin film, wherein the phase-change thin film comprises a phase-change material layer and a heterojunction layer, and the phase-change material layer is in contact with the heterojunction layer; the phase-change material layer is formed by using a phase-change material, and the heterojunction layer is formed by using a heterojunction material; a lattice mismatch degree between the heterojunction material and the phase-change material is less than or equal to 20%; contact crystal planes of the heterojunction material and the phase-change material have the same lattice included angle; and the melting point of the heterojunction material is greater than that of the phase-change material. The phase-change memory cell has the advantages of a simple structure, a high operation reliability, a high stability, a high read-write speed, a long service life, etc.
Inventors:
CHEN XIN (CN)
LI XIANG (CN)
LI XIANG (CN)
Application Number:
PCT/CN2022/097453
Publication Date:
December 15, 2022
Filing Date:
June 07, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00; H01L27/24
Domestic Patent References:
| WO2020247038A1 | 2020-12-10 |
Foreign References:
| CN113140674A | 2021-07-20 | |||
| CN108987567A | 2018-12-11 | |||
| CN108666416A | 2018-10-16 | |||
| CN103794723A | 2014-05-14 | |||
| CN202110655982A | 2021-06-11 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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