PHASE CHANGE MEMORY AND ELECTRONIC DEVICE

Title:

PHASE CHANGE MEMORY AND ELECTRONIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2022/252219

Kind Code:

A1

Abstract:

Provided in the embodiments of the present application are a phase change memory and an electronic device, the phase change memory comprising a first electrode, a second electrode, and a phase change memory unit positioned between the first electrode and the second electrode, the phase change memory unit comprising a phase change memory layer, the phase change memory layer at least comprising a stacked first phase change layer and second phase change layer, a first end of the first phase change layer and second phase change layer on the same side being coupled with and electrically connected to the first electrode, and a second end of the first phase change layer and second phase change layer on the other side being coupled with and electrically connected to the second electrode; the current flows through the phase change memory unit via the second electrode and then flows out from the first electrode, i.e. the direction of the current flowing through the phase change memory layer is perpendicular to the stacking direction of the phase change memory layer, reducing the diffusion of phase change material molecules along the stacking direction between the layers in the phase change layer under the action of the current to ensure the function of the phase change memory unit, thereby improving the cycle durability of the phase change memory.

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Inventors:

QIN QING (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)

Application Number:

PCT/CN2021/098367

Publication Date:

December 08, 2022

Filing Date:

June 04, 2021

Export Citation:

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Assignee:

HUAWEI TECH CO LTD (CN)

International Classes:

H01L45/00; H01L27/24

Foreign References:

CN112768491A	2021-05-07
CN112436028A	2021-03-02
US20140246646A1	2014-09-04

Attorney, Agent or Firm:

LEADER PATENT & TRADEMARK FIRM (CN)

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