Title:
PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/236707
Kind Code:
A1
Abstract:
The embodiments of the present application relate to the technical field of memories. Provided are a phase change memory and a manufacturing method therefor, and an electronic device, which can solve the problem of increased power consumption due to an increase in a phase change speed of a phase change material layer in a phase change memory. The phase change memory comprises a plurality of storage units which are distributed in an array. Each storage unit comprises a heating electrode, a phase change material layer and a first electrode, which are successively arranged in a stacked manner, wherein the heating electrode comprises an insulating material layer, and a plurality of conductive channels, which are arranged in the insulating material layer and are formed by defects, and the conductive channels are in contact with the phase change material layer.
Inventors:
YING CHENGWEI (CN)
QIN QING (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)
QIN QING (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)
Application Number:
PCT/CN2021/093123
Publication Date:
November 17, 2022
Filing Date:
May 11, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00; H01L27/24
Domestic Patent References:
| WO2020159214A1 | 2020-08-06 |
Foreign References:
| US20140264243A1 | 2014-09-18 | |||
| CN1602550A | 2005-03-30 | |||
| TW200802840A | 2008-01-01 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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