Title:
PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/241637
Kind Code:
A1
Abstract:
The present disclosure relates to a phase change memory (PCM) and a manufacturing method therefor. The PCM may comprise a plurality of phase change memory cells, wherein each phase change memory cell comprises an upper electrode, a lower electrode, and two phase change layers, which are located between the upper electrode and the lower electrode. The cross-sectional area of the upper electrode is less than the cross-sectional area of the lower electrode. The melting temperature of the phase change layer that is close to the upper electrode is lower than the melting temperature of the phase change layer that is close to the lower electrode, and the cross-sectional area of the phase change layer that is close to the upper electrode is less than or equal to the cross-sectional area of the phase change layer that is close to the lower electrode. By means of such a PCM, a crystallization process can be accelerated, thereby improving a phase change speed and accelerating a write operation.
Inventors:
ZHOU XUE (CN)
QIN QING (CN)
JIAO HUIFANG (CN)
QIN QING (CN)
JIAO HUIFANG (CN)
Application Number:
PCT/CN2021/094324
Publication Date:
November 24, 2022
Filing Date:
May 18, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00
Foreign References:
| CN105247677A | 2016-01-13 | |||
| CN104934531A | 2015-09-23 | |||
| CN101252169A | 2008-08-27 | |||
| CN103022349A | 2013-04-03 | |||
| CN111540828A | 2020-08-14 | |||
| US20150263283A1 | 2015-09-17 |
Attorney, Agent or Firm:
KING & WOOD MALLESONS (CN)
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