Title:
PHASE CHANGE MEMORY AND MANUFACTURING METHOD FOR PHASE CHANGE MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/035408
Kind Code:
A1
Abstract:
Provided in the present disclosure are a phase change memory and a manufacturing method for a phase change memory. The phase change memory comprises: a substrate; a stacked structure, the stacked structure being arranged on the substrate; a heating layer, which is configured as a part of the stacked structure; a phase change layer, which is arranged within the stacked structure; and a conductive layer, which is arranged within the phase change layer, the phase change layer covering the conductive layer, and the conductive layer extending along a thickness direction of the stacked structure; an electrical current path is present between the conductive layer and the heating layer, and an area where the phase change layer is connected to the heating layer produces a phase change.
Inventors:
WU XIAOFEI (CN)
Application Number:
PCT/CN2021/131778
Publication Date:
March 16, 2023
Filing Date:
November 19, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L45/00; H01L27/24
Foreign References:
| CN106098721A | 2016-11-09 | |||
| CN110707209A | 2020-01-17 | |||
| CN105655368A | 2016-06-08 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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