Title:
PHASE CHANGE MEMORY AND METHOD FOR MANUFACTURING PHASE CHANGE MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/028722
Kind Code:
A1
Abstract:
Embodiments of the present application disclose a phase change memory and a method for manufacturing the phase change memory. The phase change memory comprises: one or more phase change memory cells, each of said phase change memory cells comprising a first electrode layer, a first thermal resistor layer, a storage layer, a second thermal resistor layer, and a second electrode layer, stacked in sequence; the storage layer comprises a phase change layer and a heating layer, the heating layer being embedded in the phase change layer, and an electrical conductivity of a material of the heating layer being less than that of a material of the phase change layer. By means of the embodiments of the present application, more heat can be provided through heating by the heating layer, improving heat utilization efficiency, and a process of writing "1" can be completed while a smaller reset current is applied.
Inventors:
WANG XIAOJIE (CN)
ZHOU XUE (CN)
FAN LUMING (CN)
QIN QING (CN)
JIAO HUIFANG (CN)
ZHOU XUE (CN)
FAN LUMING (CN)
QIN QING (CN)
JIAO HUIFANG (CN)
Application Number:
PCT/CN2021/115182
Publication Date:
March 09, 2023
Filing Date:
August 28, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/24; H01L45/00
Foreign References:
| CN1744325A | 2006-03-08 | |||
| CN102544356A | 2012-07-04 | |||
| CN101645453A | 2010-02-10 | |||
| CN101226989A | 2008-07-23 | |||
| KR20140030606A | 2014-03-12 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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