PHOSPHORUS-ADDED DIAMOND FILM HAVING SIGNIFICANTLY REDUCED ELECTRON EMISSION VOLTAGE, PROCESS FOR PRODUCING THE SAME, AND ELECTRON SOURCE USING SAID PHOSPHORUS-ADDED DIAMOND FILM

WIPO Patent Application WO/2007/037087

A1

[PROBLEMS] To provide a phosphorus-added diamond film having significantly reduced electron emission voltage, a process for producing the same, and a diamond electron source using the phosphorus-added diamond film, having stable and excellent electron emission characteristics and utilizable in a low-voltage operable cold cathode surface structure. [MEANS FOR SOLVING PROBLEMS] A phosphorus-added diamond film having significantly reduced electron emission voltage produced by a production process comprising growing a diamond film on a diamond substrate by a microwave CVD process in an atmosphere containing methane and hydrogen gases and phosphorus, characterized in that tertiary butyl phosphorus is used as a phosphorus addition source, the concentration of phosphorus is not less than 1015 cm-3, the resistivity is not more than 107 Ωcm, and the electron emission start voltage is not more than 30 V, and a diamond electron source using the same.

YAMADA, Takatoshi (Tsukuba Central 2 1-1, Umezono 1-chom, Tsukuba-shi Ibaraki 68, 3058568, JP)
山田 貴壽 (〒68 茨城県つくば市梅園１－１－１中央第２ 独立行政法人産業技術総合研究所内 Ibaraki, 3058568, JP)

JP2006/316845

April 05, 2007

August 28, 2006

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NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku Tokyo, 21, 1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関１丁目３番１号 Tokyo, 1008921, JP)
YAMADA, Takatoshi (Tsukuba Central 2 1-1, Umezono 1-chom, Tsukuba-shi Ibaraki 68, 3058568, JP)

H01J1/304; H01J9/02

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