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Patent Searching and Data


Title:
PHOTO MASK BLANK, PHOTO MASK, AND THEIR FABRICATION METHOD
Document Type and Number:
WIPO Patent Application WO/2007/010935
Kind Code:
A1
Abstract:
On one main surface of a transparent substrate (11) such as quartz as a photo mask substrate, a light shielding film (12) is arranged for exposure light. The light shielding film (12) is a so-called “light shielding film” and may also serve as a reflection preventing film. Moreover, the light shielding film has a film thickness not greater than 100 nm and is designed so that a film thickness of chrome-based compound having an optical density (OD) per unit film thickness for light having a wavelength of 450 nm is 0.025 nm-1 occupies 70% of the entire film thickness or above. When this photo mask blank is used for fabricating a mask for ArF exposure, the film thickness and composition are selected so that the optical density of the light shielding film (12) is within a range from 1.2 to 2.3 for the light having a wavelength of 193 nm or 248 nm.

Inventors:
YOSHIKAWA HIROKI (JP)
KUBOTA HIROSHI (JP)
KINASE YOSHINORI (JP)
OKAZAKI SATOSHI (JP)
MARUYAMA TAMOTSU (JP)
HARAGUCHI TAKASHI (JP)
IWAKATA MASAHIDE (JP)
FUKUSHIMA YUICHI (JP)
SAGA TADASHI (JP)
Application Number:
PCT/JP2006/314258
Publication Date:
January 25, 2007
Filing Date:
July 19, 2006
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO (JP)
TOPPAN PRINTING CO LTD (JP)
YOSHIKAWA HIROKI (JP)
KUBOTA HIROSHI (JP)
KINASE YOSHINORI (JP)
OKAZAKI SATOSHI (JP)
MARUYAMA TAMOTSU (JP)
HARAGUCHI TAKASHI (JP)
IWAKATA MASAHIDE (JP)
FUKUSHIMA YUICHI (JP)
SAGA TADASHI (JP)
International Classes:
C23C14/06; G03F1/00; H01L21/027
Foreign References:
JP2003195483A2003-07-09
JPS60182439A1985-09-18
JPS61198156A1986-09-02
Attorney, Agent or Firm:
OHNO, Seiji et al. (Kasumigaseki Building 36F 2-5, Kasumigaseki 3-chom, Chiyoda-ku Tokyo 36, JP)
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