Title:
PHOTO SENSOR USING MICRO-STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/153831
Kind Code:
A1
Abstract:
The present invention relates to a photo sensor using a micro-structure. The photo sensor using a micro-structure according to the present invention comprises: a silicon substrate; a silicon wire which is configured on the silicon substrate, and at least a part of which has a cross-sectional width gradually increasing; a light-absorbing layer including one or more layers and stacked on the silicon wire; a voltage-applying unit which applies voltage so as to allow current to flow from the silicon wire toward the silicon substrate at the time of light reaction; and a current-measuring unit which measures current which flows in the silicon wire in response to light. According to the present invention, provided is a photo sensor using a micro-structure, which collects high concentrations of light particles and thus can increase the sensitivity of light reaction.
Inventors:
KIM SANG WOO (KR)
LIN MING JI (CN)
JEON HYUN BIN (KR)
LIN MING JI (CN)
JEON HYUN BIN (KR)
Application Number:
PCT/KR2020/001516
Publication Date:
August 05, 2021
Filing Date:
January 31, 2020
Export Citation:
Assignee:
CREPAS TECH CO LTD (KR)
International Classes:
G01J1/42; G01J1/04
Foreign References:
| KR20150112077A | 2015-10-07 | |||
| KR20130077407A | 2013-07-09 | |||
| JP2009198467A | 2009-09-03 | |||
| KR20120099835A | 2012-09-12 | |||
| KR20110074605A | 2011-06-30 | |||
| KR20200014116A | 2020-02-10 |
Attorney, Agent or Firm:
OH, Youngjin (KR)
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