Title:
PHOTOCATHODE
Document Type and Number:
WIPO Patent Application WO/1999/067802
Kind Code:
A1
Abstract:
A photocathode comprising a laminate (10) composed of a UV glass substrate (3) and, successively formed thereof, an SiO2 layer (15), a GaAlN layer (17a), a III - V nitride semiconductor layer (18) and a Cs-O layer (19). The UV glass substrate (3) that absorbs infrared rays can be heat-treated at a high speed by heating with light and can transmit ultraviolet rays, making it possible to introduce ultraviolet rays into the III - V nitride semiconductor layer (18) that effects the photo-electric conversion.
Inventors:
NIHASHI TOKUAKI (JP)
Application Number:
PCT/JP1998/002837
Publication Date:
December 29, 1999
Filing Date:
June 25, 1998
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
NIHASHI TOKUAKI (JP)
NIHASHI TOKUAKI (JP)
International Classes:
H01J1/34; H01J43/08; (IPC1-7): H01J1/34; H01J29/38; H01J31/50; H01J40/06; G01J1/02
Foreign References:
JPS61267374A | 1986-11-26 | |||
JP7093098B2 | 2022-06-29 | |||
JPH0736316B2 | 1995-04-19 | |||
JP6077437B2 | 2017-02-08 | |||
JPH10241554A | 1998-09-11 | |||
JPS61267374A | 1986-11-26 | |||
US4618248A | 1986-10-21 | |||
JPH0896705A | 1996-04-12 | |||
US5557167A | 1996-09-17 | |||
US3986065A | 1976-10-12 | |||
US4616248A | 1986-10-07 |
Other References:
See also references of EP 1098347A4
Attorney, Agent or Firm:
Hasegawa, Yoshiki (6F. Kyobashi National Building, 13-10,
Kyobashi 2-chom, Chuo-ku Tokyo, JP)
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