Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PHOTOCONVERSION DEVICE BASED ON GRAPHENE WITH ENHANCED PHOTON ABSORPTION
Document Type and Number:
WIPO Patent Application WO/2013/110803
Kind Code:
A3
Abstract:
An infrared photoconversion device comprising a collector with at least an active layer made of a single sheet of doped single-layer, bilayer, or multilayer graphene patterned as nanodisks or nanoribbons. The single sheet of doped graphene presents high absorbance and thus, the efficiency of devices such as photovoltaic cells, photodetectors, and light emission devices can be improved by using graphene as the central absorbing or emitting element. These devices become tunable because their peak absorption or emission wavelength is changed via electrostatic doping of the graphene.

Inventors:
KOPPENS FRANK (ES)
GARCIA DE ABAJO FRANCISCO JAVIER (ES)
Application Number:
PCT/EP2013/051532
Publication Date:
January 16, 2014
Filing Date:
January 28, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUNDACIO INST DE CIENCIES FOTONIQUES (ES)
CONSEJO SUPERIOR INVESTIGACION (ES)
International Classes:
H01L31/0232; G01J5/12; H01L27/142; H01L31/028; H01L31/0352; H01L31/052; H01L31/06; H01L31/09
Domestic Patent References:
WO2008112639A22008-09-18
Foreign References:
US20090140801A12009-06-04
Other References:
RYZHII V ET AL: "Device Model for Graphene Nanoribbon Phototransistor", APPLIED PHYSICS EXPRESS, THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 1, no. 6, 6 June 2008 (2008-06-06), pages 63002 - 1, XP001516309, ISSN: 1882-0778, DOI: 10.1143/APEX.1.063002
LONG JU ET AL: "Graphene plasmonics for tunable terahertz metamaterials", NATURE NANOTECHNOLOGY, vol. 6, no. 10, 4 September 2011 (2011-09-04), pages 630 - 634, XP055019212, ISSN: 1748-3387, DOI: 10.1038/nnano.2011.146
TIAN J ET AL: "Ambipolar graphene field effect transistors by local metal side gates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 96, no. 26, 1 July 2010 (2010-07-01), pages 263110-1 - 263110-3, XP012131771, ISSN: 0003-6951, DOI: 10.1063/1.3459136
MYUNG-HO BAE ET AL: "Scaling of High-Field Transport and Localized Heating in Graphene Transistors", ACS NANO, vol. 5, no. 10, 13 September 2011 (2011-09-13), pages 7936 - 7944, XP055089197, ISSN: 1936-0851, DOI: 10.1021/nn202239y
STÉPHANE BERCIAUD ET AL: "Electron and Optical Phonon Temperatures in Electrically Biased Graphene", PHYSICAL REVIEW LETTERS, vol. 104, no. 22, 3 June 2010 (2010-06-03), pages 227401 - 1, XP055089204, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.104.227401
ALBERT D. LIAO ET AL: "Thermally Limited Current Carrying Ability of Graphene Nanoribbons", PHYSICAL REVIEW LETTERS, vol. 106, no. 25, 20 June 2011 (2011-06-20), pages 256801 - 1, XP055089212, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.106.256801
N. M. GABOR ET AL: "Hot Carrier-Assisted Intrinsic Photoresponse in Graphene", SCIENCE, vol. 334, no. 6056, 6 October 2011 (2011-10-06), pages 648 - 652, XP055089620, ISSN: 0036-8075, DOI: 10.1126/science.1211384
SUKOSIN THONGRATTANASIRI ET AL: "Complete Optical Absorption in Periodically Patterned Graphene", PHYSICAL REVIEW LETTERS, vol. 108, no. 4, 27 January 2012 (2012-01-27), pages 047401 - 1, XP055088171, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.108.047401
FRANK H. L. KOPPENS ET AL: "Graphene Plasmonics: A Platform for Strong Light-Matter Interactions", NANO LETTERS, vol. 11, no. 8, 18 July 2011 (2011-07-18), pages 3370 - 3377, XP055074440, ISSN: 1530-6984, DOI: 10.1021/nl201771h
JUSTIN C. W. SONG ET AL: "Hot Carrier Transport and Photocurrent Response in Graphene", NANO LETTERS, vol. 11, no. 11, 21 September 2011 (2011-09-21), pages 4688 - 4692, XP055089626, ISSN: 1530-6984, DOI: 10.1021/nl202318u
Attorney, Agent or Firm:
CARPINTERO LOPEZ, Francisco (S.L.C/ Alcal, 35 Madrid, ES)
Download PDF: