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Title:
PHOTODETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/215903
Kind Code:
A1
Abstract:
In order to suppress the occurrence of dark current, this photodetection element comprises: a substrate; a light receiving layer that is formed above the substrate; and an electron barrier layer that is formed in contact with the light receiving layer and includes a plurality of quantum dots, wherein a semiconductor of a substrate material of the electron barrier layer and a semiconductor that makes up the quantum dots have different lattice constants.

Inventors:
IGARASHI YUICHI (JP)
Application Number:
PCT/JP2018/018237
Publication Date:
November 14, 2019
Filing Date:
May 11, 2018
Export Citation:
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Assignee:
NEC CORP (JP)
International Classes:
H01L31/10
Foreign References:
JP2007184512A2007-07-19
US20150295108A12015-10-15
JP2017011168A2017-01-12
Attorney, Agent or Firm:
SHIMOSAKA Naoki (JP)
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