Title:
PHOTODETECTOR HAVING SPECTRAL SENSITIVITY
Document Type and Number:
WIPO Patent Application WO/2012/080256
Kind Code:
A3
Abstract:
The invention relates to a photon-detection method, including a step consisting of subjecting a photodiode (PD), made of a semiconductor material, to a polarization voltage (BV) such that an avalanche breakdown can occur, when a photon penetrates into the photodiode, in an avalanche-breakdown layer (AZ) extending in the semiconductor material up to a minimum and maximum depth (Pm, PM) so as to be reachable by photons (PH, PH1) having a wavelength between a minimum and maximum wavelength (λm, λΜ), and steps of comparing the amplitude of a signal (DS), output by the photodiode, with two threshold values (V1, V2), and, if the amplitude of the signal is between the two threshold values, deducing that the photodiode has received a photon having a wavelength between two threshold wavelengths (λS1, λS2) that are between the minimum and maximum wavelengths.
Inventors:
GACH JEAN-LUC (FR)
Application Number:
PCT/EP2011/072618
Publication Date:
May 23, 2013
Filing Date:
December 13, 2011
Export Citation:
Assignee:
UNIV PROVENCE AIX MARSEILLE 1 (FR)
GACH JEAN-LUC (FR)
GACH JEAN-LUC (FR)
International Classes:
H01L31/02; G01J3/00; H01L31/107
Foreign References:
| JP2008241578A | 2008-10-09 |
Other References:
KIRN TH ET AL: "Wavelength dependence of avalanche photodiode (APD) parameters", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NETHERLANDS, vol. 387, no. 1, 1 March 1997 (1997-03-01), pages 202 - 204, XP004058947, ISSN: 0168-9002, DOI: 10.1016/S0168-9002(96)00990-4
Attorney, Agent or Firm:
DE ROQUEMAUREL, Bruno et al. (24 place des Martyrs de la Résistance, Aix-en-Provence, FR)
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