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Patent Searching and Data


Title:
PHOTODETECTOR MANUFACTURING METHOD USING TENSILE STRAIN, PHOTODETECTOR MANUFACTURED THEREBY, AND MANUFACTURING APPARATUS THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/131470
Kind Code:
A1
Abstract:
Disclosed are a photodetector manufacturing method using tensile strain, a photodetector manufactured thereby, and a manufacturing apparatus therefor. The photodetector manufacturing method according to an embodiment of the present invention comprises the steps of: preparing a stretchable thin film having a nanomembrane array pattern made of active materials for light detection; and manufacturing a photodetection array sensor by applying a tensile strain to the stretchable thin film.

Inventors:
AHN JONG HYUN (KR)
KATIYAR AJIT KUMAR (GB)
THAI KEAN YOU (KR)
Application Number:
PCT/KR2021/009500
Publication Date:
June 23, 2022
Filing Date:
July 22, 2021
Export Citation:
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Assignee:
UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV (KR)
International Classes:
G01J5/20; G01J3/10
Foreign References:
KR101976024B12019-05-08
KR20200132575A2020-11-25
KR20120129439A2012-11-28
Other References:
KATIYAR AJIT K, KEAN YOU THAI , WON SEOK YUN , JAEDONG LEE , JONG-HYUN AHN: "Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering", SCIENCE ADVANCED, vol. 6, no. 31, 29 July 2020 (2020-07-29), pages 1 - 10, XP055942168, DOI: 10.1126/sciadv.abb0576
MAITI R.; PATIL C.; SAADI M. A. S. R.; XIE T.; AZADANI J. G.; ULUUTKU B.; AMIN R.; BRIGGS A. F.; MISCUGLIO M.; VAN THOURHOUT D.; S: "Strain-engineered high-responsivity MoTephotodetector for silicon photonic integrated circuits", NATURE PHOTONICS, vol. 14, no. 9, 22 June 2020 (2020-06-22), London, pages 578 - 584, XP037227743, ISSN: 1749-4885, DOI: 10.1038/s41566-020-0647-4
Attorney, Agent or Firm:
KWON, Sung Hyun et al. (KR)
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