Title:
PHOTODETECTOR AND METHOD FOR MANUFACTURING PHOTODETECTOR
Document Type and Number:
WIPO Patent Application WO/2020/121858
Kind Code:
A1
Abstract:
A photodetector 1 is provided with a semiconductor substrate 10. In the semiconductor substrate 10, as viewed from the orthogonal direction to the main surface 10a, an APD 11 and a temperature compensation diode 12 are formed apart from each other. The semiconductor substrate 10 has a peripheral carrier absorption part 13 that absorbs a carrier positioned at the periphery, between the APD 11 and the temperature compensation diode 12, as viewed from the orthogonal direction to the main surface 10a. Viewed from the orthogonal direction to the main surface 10a, the shortest distance between the APD 11 and the peripheral carrier absorption part 13 on a line segment connecting the APD 11 and the temperature compensation diode 12 at the shortest distance is shorter than the shortest distance between the temperature compensation diode 12 and the nearest portion 13c to the APD 11 among the edges 13a, 13b of the peripheral carrier absorption part 13.
Inventors:
SONOBE HIRONORI (JP)
Application Number:
PCT/JP2019/046908
Publication Date:
June 18, 2020
Filing Date:
November 29, 2019
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
G01J1/42; G01J1/44; H01L31/107
Foreign References:
| JPS5062389A | 1975-05-28 | |||
| JPH06224463A | 1994-08-12 | |||
| JPS61289677A | 1986-12-19 | |||
| JPS62239727A | 1987-10-20 | |||
| JPS60211886A | 1985-10-24 | |||
| US4948989A | 1990-08-14 | |||
| JPH0727607A | 1995-01-31 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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