PHOTODETECTOR - HAMAMATSU PHOTONICS KK

Title:

PHOTODETECTOR

Document Type and Number:

WIPO Patent Application WO/2020/121852

Kind Code:

A1

Abstract:

A photodetector 1 comprises a semiconductor substrate, a plurality of pad electrodes 42, and a plurality of wires. The plurality of pad electrodes 42 is positioned on the semiconductor substrate 20. Each of the plurality of wires is connected to a corresponding pad electrode 42. A stitch bond of a corresponding wire is formed on each pad electrode 42. The distance T1 between each pad electrode 42 and a cell 22 corresponding to the pad electrode 42 is less than the distance T2 between pad electrodes 42 connected to different cells 22. The plurality of pad electrodes 42 is positioned in a first region R1 and a second region R2, which are separated from each other with a light-receiving region S therebetween. The pad electrodes 42 corresponding to cells 22a are positioned in the first region R1. The pad electrodes 42 corresponding to cells 22b are positioned in the second region R2.

Inventors:

SONOBE HIRONORI (JP)
NISHIO FUMITAKA (JP)
MURAMATSU MASANORI (JP)
OKAZAKI YUJI (JP)

Application Number:

PCT/JP2019/046881

Publication Date:

June 18, 2020

Filing Date:

November 29, 2019

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HAMAMATSU PHOTONICS KK (JP)

International Classes:

G01J1/02; G01J1/42; G01J1/44; H01L27/146; H01L31/107

Foreign References:

JP2009038157A	2009-02-19
JP2004303878A	2004-10-28
JP2007281509A	2007-10-25
JP2004281488A	2004-10-07
JPS62279671A	1987-12-04
JPS6413768A	1989-01-18
JPS61289677A	1986-12-19
JPH10247717A	1998-09-14