Title:
PHOTODIODE, METHOD FOR MANUFACTURING SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER, AND DEVICE FOR IMAGING SOLIDS
Document Type and Number:
WIPO Patent Application WO/2012/169462
Kind Code:
A1
Abstract:
A photodiode provided with a high-concentration layer on the surface thereof, the high-concentration layer being formed so that the thickness of an un-depleted region is greater than that of irregularities in the interface between silicon and an insulating film layer, and less than the penetration depth of ultraviolet light.
Inventors:
SUGAWA SHIGETOSHI (JP)
KURODA RIHITO (JP)
KURODA RIHITO (JP)
Application Number:
PCT/JP2012/064394
Publication Date:
December 13, 2012
Filing Date:
June 04, 2012
Export Citation:
Assignee:
UNIV TOHOKU (JP)
SHIMADZU CORP (JP)
SUGAWA SHIGETOSHI (JP)
KURODA RIHITO (JP)
SHIMADZU CORP (JP)
SUGAWA SHIGETOSHI (JP)
KURODA RIHITO (JP)
International Classes:
G01J3/36; H01L31/10; H01L27/146
Foreign References:
| JPH0391967A | 1991-04-17 | |||
| JPH034231U | 1991-01-17 | |||
| JP2002255700A | 2002-09-11 | |||
| JP2006525677A | 2006-11-09 | |||
| JP2005175316A | 2005-06-30 | |||
| JP2003139611A | 2003-05-14 | |||
| JPS50134394A | 1975-10-24 | |||
| JPS50114187A | 1975-09-06 |
Other References:
See also references of EP 2720281A4
None
None
Attorney, Agent or Firm:
Kyoto International Patent Law Office (JP)
Patent business corporation Kyoto international patent firm (JP)
Patent business corporation Kyoto international patent firm (JP)
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Claims: