Title:
PHOTODIODE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2005/098966
Kind Code:
A1
Abstract:
A Schottky photodiode comprises a semiconductor layer, and a conductive film provided in contact with the semiconductor layer. The conductive film has a hole, and a periodic structure provided around the hole and bringing about a resonance state on the film surface by a surface plasmon excited by an incident light to the surface of the conductive film. The photodiode senses an evanescent light generated on the interface between the conductive film and the semiconductor layer by the excited surface plasmon. The hole has a diameter smaller than the wavelength of the incident light.
Inventors:
OOHASHI KEISHI (JP)
ISHI TSUTOMU (JP)
BABA TOSHIO (JP)
FUJIKATA JUNICHI (JP)
MAKITA KIKUO (JP)
ISHI TSUTOMU (JP)
BABA TOSHIO (JP)
FUJIKATA JUNICHI (JP)
MAKITA KIKUO (JP)
Application Number:
PCT/JP2005/006660
Publication Date:
October 20, 2005
Filing Date:
April 05, 2005
Export Citation:
Assignee:
NEC CORP (JP)
OOHASHI KEISHI (JP)
ISHI TSUTOMU (JP)
BABA TOSHIO (JP)
FUJIKATA JUNICHI (JP)
MAKITA KIKUO (JP)
OOHASHI KEISHI (JP)
ISHI TSUTOMU (JP)
BABA TOSHIO (JP)
FUJIKATA JUNICHI (JP)
MAKITA KIKUO (JP)
International Classes:
H01L31/0216; H01L31/0224; H01L31/108; (IPC1-7): H01L31/0216
Foreign References:
| JP2003287656A | 2003-10-10 | |||
| US20030173501A1 | 2003-09-18 | |||
| US6236033B1 | 2001-05-22 | |||
| JP2000222765A | 2000-08-11 |
Other References:
FUJIKATA J. ET AL: "Surface Plasmon Enhancement Effect and Its Application to Near-Field Optical Recording.", TRANSACTIONS OF THE MAGNETICS SOCIETY OF JAPAN., vol. 4, no. 4-2, 1 November 2004 (2004-11-01), pages 255 - 259, XP002990154
Attorney, Agent or Firm:
Miyazaki, Teruo (16th Kowa Bldg. 9-20, Akasaka 1-chom, Minato-ku Tokyo 52, JP)
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