Title:
PHOTODIODE PREPARATION METHOD, PHOTODIODE, AND CMOS IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2020/186512
Kind Code:
A1
Abstract:
The present application provides a photodiode preparation method, a photodiode, and a complementary metal-oxide semiconductor (CMOS) image sensor, said method comprising: forming a masking layer on a substrate, the substrate having a first doping type, the substrate being provided with a preset position, the first doping type and the second doping type being different; processing a masking layer, such that the thickness of the masking layer above the preset position is less than the thickness of the masking layer above the non-preset position; performing ion implantation on the substrate such that the implanted ions form a region having a curved lower surface and a second doping type so as to increase the area of contact between the substrate and the region; removing the masking layer to obtain a photodiode. The present application increases the areas of contact between the substrate and the first doping type and between the region and the second doping type, improving full-well capacity.
Inventors:
YAO GUOFENG (CN)
SHEN JIAN (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2019/079052
Publication Date:
September 24, 2020
Filing Date:
March 21, 2019
Export Citation:
Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L31/18; H01L31/0352
Foreign References:
| CN101471365A | 2009-07-01 | |||
| CN101471365A | 2009-07-01 | |||
| CN104517896A | 2015-04-15 | |||
| CN105590966A | 2016-05-18 | |||
| CN104517841A | 2015-04-15 | |||
| US20030155593A1 | 2003-08-21 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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