PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION MODULE AND SOLAR PHOTOVOLTAIC POWER GENERATION SYSTEM

WIPO Patent Application WO/2017/164099

A1

This photoelectric conversion device (10) is provided with a semiconductor substrate (1), a passivation film (3), an n-type amorphous semiconductor layer, a p-type amorphous semiconductor layer (5p) and an electrode (7). The passivation film (3) is formed on one surface of the semiconductor substrate (1). The n-type amorphous semiconductor layer and the p-type amorphous semiconductor layer (5p) are alternately arranged in the in-plane direction (the Y axis direction) of the semiconductor substrate (1). The p-type amorphous semiconductor layer (5p) has a film thickness reduced region (51) in the longitudinal direction (the X axis direction). The same applies to the n-type amorphous semiconductor layer. The electrode (7) is arranged on the p-type amorphous semiconductor layer (5p), and is not arranged on a region that has a positive curvature r with respect to the longitudinal direction of the film thickness reduced region (51). The same applies to an electrode on the n-type amorphous semiconductor layer.

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HIGASHIKAWA MAKOTO
SAKAI TOSHIHIKO
TSUJINO KAZUYA
ZOU LIUMIN
HIGO TERUAKI
MATSUMOTO YUTA

PCT/JP2017/010841

September 28, 2017

March 17, 2017

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SHARP KK (JP)

H01L31/0747; H01L31/0224; H01L31/05; H02S10/00

WO2016208219A1

2016-12-29

JP2015108625A	2015-06-11
JP2010283406A	2010-12-16
US20120042945A1	2012-02-23

KAWAKAMI Keiko et al. (JP)

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