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Title:
PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/136169
Kind Code:
A1
Abstract:
Disclosed is a photoelectric conversion device with improved photoelectric conversion efficiency. In the disclosed photoelectric conversion device (100), an amorphous silicon photoelectric conversion unit (102) with an amorphous i-type layer and a microcrystalline silicon photoelectric conversion unit (104) with a microcrystalline i-type layer are laminated, and an intermediate layer (14), which is disposed between the amorphous silicon photoelectric conversion unit (102) and the microcrystalline silicon photoelectric conversion unit (104), has a lower refractive index than the layers in contact with the front or back surfaces thereof, wherein the higher the crystallization rate of the microcrystalline i-type layer in the panel surface, the thicker the film of the intermediate layer (14) is formed.

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Inventors:
YATA SHIGEO (JP)
Application Number:
PCT/JP2011/060047
Publication Date:
November 03, 2011
Filing Date:
April 25, 2011
Export Citation:
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Assignee:
SANYO ELECTRIC CO (JP)
YATA SHIGEO (JP)
International Classes:
H01L31/04
Domestic Patent References:
WO2011007593A12011-01-20
WO2009119124A12009-10-01
Foreign References:
JPH11251612A1999-09-17
JP2007266094A2007-10-11
Attorney, Agent or Firm:
Hiroshi Sumiya (JP)
KADOYA HIROSHI (JP)
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