PHOTOELECTRIC CONVERSION ELEMENT, IMAGING DEVICE, AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT

WIPO Patent Application WO/2017/021812

A1

Provided is a photoelectric conversion element containing a photoelectric conversion layer having a flat upper surface. Also provided is an imaging device containing a photoelectric conversion layer having a flat upper surface. Provided is an imaging device having outstanding imaging performance. Also provided is an imaging device having small variation between pixels. Also provided is an imaging device having a high degree of integration. The photoelectric conversion element comprises a first electrode, a photoelectric conversion layer on the first electrode, a hole injection barrier layer on the photoelectric conversion layer, and a second electrode on the hole injection barrier layer, wherein the first electrode contains Ti, the second electrode contains indium tin oxide, the photoelectric conversion layer contains crystalline selenium, the hole injection barrier layer contains gallium oxide or an In-Ga-Zn oxide, and at least part of the upper surface of the photoelectric conversion layer has an average surface roughness (Ra) not exceeding 20nm.

SUGAWARA TAKESHI (JP)
KURIKI KAZUTAKA (JP)
HIURA YOSHIKAZU (JP)
KATAISHI RIHO (JP)
NONAKA YUSUKE (JP)
YATSUZUKA SHOTA (JP)

PCT/IB2016/054411

February 09, 2017

July 25, 2016

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SEMICONDUCTOR ENERGY LAB (JP)

H01L27/146; H01L21/363; H01L27/14; H01L29/786; H01L31/10; H04N5/369

JP2014017440A	2014-01-30
JPS5087790A	1975-07-15
JP2014216502A	2014-11-17
JP2013239532A	2013-11-28

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