Title:
PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/150987
Kind Code:
A1
Abstract:
A photoelectric conversion element according to one embodiment of the present disclosure is provided with: a first electrode (11) comprising a plurality of mutually independent electrodes; a second electrode (16) disposed facing the first electrode; a photoelectric conversion layer (15) that includes semiconductor nanoparticles and is provided between the first electrode and the second electrode; a first semiconductor layer (13) that includes an oxide semiconductor material and is provided between the first electrode and the photoelectric conversion layer; and a second semiconductor layer (14) that satisfies formulas (1), (2), and (3), and is provided between the first semiconductor layer and the photoelectric conversion layer. Formula (1): EV2 > EVCQD
Formula (2): EC1 > EC2 ≥ ECCQD
Formula (3): E g2 > EgCQD
Inventors:
BANDO MASASHI (JP)
SHIOMI MICHINORI (JP)
SHIOMI MICHINORI (JP)
Application Number:
PCT/JP2019/001436
Publication Date:
August 08, 2019
Filing Date:
January 18, 2019
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L31/10; B82Y20/00; H01L27/146; H04N5/369
Foreign References:
| JP2014124715A | 2014-07-07 | |||
| JP2017157816A | 2017-09-07 | |||
| US9099663B1 | 2015-08-04 | |||
| JP2014022734A | 2014-02-03 |
Other References:
DAGHER, S. ET AL.: "PbS/CdS heterojunction quantum dot solar cells", JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS, vol. 27, no. 4, 10 December 2015 (2015-12-10), pages 3328 - 3340, XP035915343, doi:10.1007/s10854-015-4162-1
ZHANG, X. ET AL.: "Reduction of charge recombination in PbS colloidal quantum dot solar cells at the quantum dot/ZnO interface by inserting a MgZnO buffer laye r", JOURNAL OF METERIALS CHEMISTRY A MATERIALS FOR ENERGY AND SUSTAINABILITY, vol. 5, no. 1, 7 January 2017 (2017-01-07), pages 303 - 310, XP055628429
ZHANG, X. ET AL.: "Reduction of charge recombination in PbS colloidal quantum dot solar cells at the quantum dot/ZnO interface by inserting a MgZnO buffer laye r", JOURNAL OF METERIALS CHEMISTRY A MATERIALS FOR ENERGY AND SUSTAINABILITY, vol. 5, no. 1, 7 January 2017 (2017-01-07), pages 303 - 310, XP055628429
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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