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Title:
PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/017350
Kind Code:
A1
Abstract:
This photoelectric conversion element comprises a bottom electrode, a charge blocking layer for suppressing charge injection from the bottom electrode, an organic layer including a photoelectric conversion layer, and a top electrode including a transparent electrode layer, laminated in that order on a substrate. The photoelectric conversion layer is composed of an amorphous film, and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor comprising fullerene. The difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.

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Inventors:
SAWAKI DAIGO (JP)
Application Number:
PCT/JP2015/068931
Publication Date:
February 04, 2016
Filing Date:
July 01, 2015
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L31/10; H01L27/146
Foreign References:
JP2014029905A2014-02-13
JP2014003094A2014-01-09
JP2014090093A2014-05-15
JP2010287607A2010-12-24
JP2013189602A2013-09-26
JP2008166339A2008-07-17
JP2013118365A2013-06-13
JP2012031143A2012-02-16
JP2013203881A2013-10-07
JP2013225542A2013-10-31
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
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