Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/035987
Kind Code:
A1
Abstract:
Provided is a photoelectric conversion element enabling improved output. A photoelectric conversion element 1 is a back face junction-type photoelectric conversion element that includes: a first region 7 in which an intrinsic semiconductor layer 23 and a first conductivity-type semiconductor layer 25 are stacked in that order on a section of the back face of a semiconductor substrate 11; and a second region 8 in which an intrinsic semiconductor layer 33 and a second conductivity-type semiconductor layer 35 are stacked in that order on another section of the back face of the semiconductor substrate 11, wherein the refractive index of the intrinsic semiconductor layer 23 in the first region 7 is smaller than that of the intrinsic semiconductor layer 33 in the second region 8.

Inventors:
YOSHIKAWA KUNTA (JP)
KAWASAKI HAYATO (JP)
KOIZUMI GENSUKE (JP)
Application Number:
PCT/JP2019/022183
Publication Date:
February 20, 2020
Filing Date:
June 04, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KANEKA CORP (JP)
International Classes:
H01L31/0747
Domestic Patent References:
WO2016076300A12016-05-19
WO2013179529A12013-12-05
WO2012132766A12012-10-04
WO2017203751A12017-11-30
Foreign References:
US20130133729A12013-05-30
Attorney, Agent or Firm:
NIIYAMA Yuichi et al. (JP)
Download PDF:



 
Previous Patent: IMAGE FORMATION DEVICE

Next Patent: FLOW RATE MEASUREMENT DEVICE