Title:
PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/056232
Kind Code:
A1
Abstract:
Provided are high-speed and high-sensitive photoelectric conversion element and solid-state image pickup device, each having a simple structure and a wide dynamic range. The present invention is provided with: a first conductivity-type base body region; a second conductivity-type surface embedded region (33a), which is selectively embedded in an upper portion of the base body region, and which forms a photodiode (PD) with the base body region; a second conductivity-type first charge accumulating region (SD1), which is embedded in the upper portion of the base material region, and in which first signal charges generated by the photodiode (PD) are accumulated, said first signal charges having been transferred from the surface embedded region (33a); and a second conductivity-type second charge accumulating region (SD2), which is embedded in the base body region, and in which second signal charges generated by the photodiode (PD) are accumulated, said second signal charges having been transferred from the surface embedded region (33a). The transfer of the first signal charges from the surface embedded region (33a) to the first charge accumulating region (SD1) in a first time, and the transfer of the second signal charges from the surface embedded region (33a) to the second charge accumulating region (SD2) in a second time that is shorter than the first time are repeated a plurality of times in one frame.
Inventors:
KAWAHITO SHOJI (JP)
Application Number:
PCT/JP2017/033599
Publication Date:
March 29, 2018
Filing Date:
September 15, 2017
Export Citation:
Assignee:
UNIV SHIZUOKA NAT UNIV CORP (JP)
International Classes:
H01L31/10; H01L27/146; H04N5/355; H04N5/374
Domestic Patent References:
| WO2007083704A1 | 2007-07-26 |
Foreign References:
| JP2010278654A | 2010-12-09 | |||
| JP2014160878A | 2014-09-04 |
Attorney, Agent or Firm:
SUZUKI Sohbe (JP)
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