Title:
PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/129481
Kind Code:
A1
Abstract:
Provided is a photoelectric conversion element which is able to be suppressed in decrease of the photoelectric conversion efficiency due to overlapping of an n-type semiconductor layer and a p-type semiconductor layer. On the back surface of a semiconductor substrate 1, n-type amorphous semiconductor layers 4 and p-type amorphous semiconductor layers 5 are alternately arranged at predetermined intervals. An alignment mark 4M that comprises a layer of the same semiconductor as the n-type amorphous semiconductor layers 4 is also formed on the back surface of a semiconductor substrate 1. At least a texture structure is formed in a portion of the surface of the semiconductor substrate 1, said portion being at the boundary with the alignment mark 4M.
Inventors:
SAKAI TOSHIHIKO
KAMIKAWA TAKESHI
HARADA MASATOMI
KUNIYOSHI TOKUAKI
ZOU LIUMIN
KAMIKAWA TAKESHI
HARADA MASATOMI
KUNIYOSHI TOKUAKI
ZOU LIUMIN
Application Number:
PCT/JP2016/053226
Publication Date:
August 18, 2016
Filing Date:
February 03, 2016
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L31/0747; H01L31/0236; H01L31/18
Domestic Patent References:
| WO2012132615A1 | 2012-10-04 | |||
| WO2015146333A1 | 2015-10-01 |
Foreign References:
| JP2010258043A | 2010-11-11 | |||
| JP2013187287A | 2013-09-19 | |||
| JP2001203379A | 2001-07-27 | |||
| JP2012064839A | 2012-03-29 |
Attorney, Agent or Firm:
KAWAKAMI Keiko et al. (JP)
Keiko Kawakami (JP)
Keiko Kawakami (JP)
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