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Patent Searching and Data


Title:
PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/168175
Kind Code:
A1
Abstract:
Provided is a photoelectric conversion element that is capable of selectively reflecting light as a result of the structure of the photoelectric conversion element itself. The photoelectric conversion element uses a semiconductor for converting light into electric power via the photovoltaic effect and is provided with: a semiconductor layer which comprises a semiconductor; a front side metal layer which is a metal layer formed on the surface of the semiconductor layer; and a rear side metal layer which is a metal layer formed on the rear surface of the semiconductor layer, wherein the front side metal layer, the semiconductor layer, and the rear side metal layer form a resonator having an MSM structure.

Inventors:
HANAMURA KATSUNORI (JP)
ISOBE KAZUMA (JP)
UNO TOMOHIRO (JP)
TOKUMARU SHINJI (JP)
KOBAYASHI TAKAYUKI (JP)
Application Number:
PCT/JP2019/008198
Publication Date:
September 06, 2019
Filing Date:
March 01, 2019
Export Citation:
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Assignee:
TOKYO INST TECH (JP)
NIPPON STEEL CORP (JP)
International Classes:
H01L31/054; G02B5/26; H01L31/0693
Foreign References:
JP2012514322A2012-06-21
JP2008300626A2008-12-11
JP2006501638A2006-01-12
US5227648A1993-07-13
Other References:
SCRANTON, G. ET AL.: "Highly Efficient Thermophotovoltaics Enabled by Photon Re-Use", IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE, 21 November 2016 (2016-11-21), pages 1026 - 1029
WALKER, A. W. ET AL.: "Impact of Photon Recycling on GaAs Solar Cell Designs", IEEE JOURNAL OF PHOTOVOLTAICS, vol. 5, November 2015 (2015-11-01), pages 1636 - 1645, XP011588079, doi:10.1109/JPHOTOV.2015.2479463
JURCZAK, P. ET AL.: "Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations", OPTICS EXPRESS, vol. 23, 27 August 2015 (2015-08-27), pages A1208 - A1219
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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