PHOTOELECTRIC CONVERSION MATERIAL, FILM CONTAINING MATERIAL, PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, METHOD OF USING PHOTOELECTRIC CONVERSION ELEMENT, PHOTOSENSOR AND IMAGE SENSOR

Title:

Document Type and Number:

WIPO Patent Application WO/2012/032990

Kind Code:

A1

Abstract:

To provide a compound which contributes to providing a photoelectric conversion element that exhibits high photoelectric conversion efficiency, low dark current, and rapid response, and which does not decompose during vapor deposition. That is, provided is a compound with a specific structure having an absorption maximum in the range of 400 nm or more and less than 720 nm in the UV-Vis absorption spectra, the molar absorption coefficient of the absorption maximum wavelength being 10,000 mol-1 l cm-1 or more, and the difference of the difference between the melting point and the deposition temperature (melting point minus deposition temperature) is 31°C or more.

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Inventors:

YOFU KATSUYUKI
NOMURA KIMIATSU
FUKUZAKI EIJI
HIRAI YUKI
HAMANO MITSUMASA
MITSUI TETSURO

Application Number:

PCT/JP2011/069849

Publication Date:

March 15, 2012

Filing Date:

August 31, 2011

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Assignee:

FUJIFILM CORP (JP)
YOFU KATSUYUKI
NOMURA KIMIATSU
FUKUZAKI EIJI
HIRAI YUKI
HAMANO MITSUMASA
MITSUI TETSURO

International Classes:

C07C225/22; C07D219/02; C07D455/06; C07D471/16; H01L27/146; H01L31/10

Domestic Patent References:

WO2011118578A1	2011-09-29
WO2011125526A1	2011-10-13

Foreign References:

JP2010103457A	2010-05-06
US20110204208A1	2011-08-25
JP2011213706A	2011-10-27
JP2010168511A	2010-08-05

Attorney, Agent or Firm:

TAKAMATSU Takeshi et al. (JP)
Takamatsu 猛 (JP)

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