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Patent Searching and Data


Title:
PHOTOELECTRIC CONVERTER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2011/065343
Kind Code:
A1
Abstract:
A photoelectric converter wherein scattering of photoelectric conversion efficiency in a panel plane is suppressed. A method for producing a photoelectric converter provided with a microcrystalline silicon photoelectric conversion unit (104) which has a layered structure comprising a p-type layer (40), an i-type layer (42) including a microcrystalline silicon layer serving as a power-generating layer, and an n-type layer (44), said method involving a step for forming the i-type layer (42) wherein a first i-type layer (42a) is formed and then a second i-type layer (42b), which has a higher crystallization degree than the first i-type layer (42a), is formed on the first i-type layer (42a) under such conditions that the in-plane distribution of the crystallization degree is lowered.

Inventors:
KUNII TOSHIE (JP)
MATSUMOTO MITSUHIRO (JP)
Application Number:
PCT/JP2010/070853
Publication Date:
June 03, 2011
Filing Date:
November 24, 2010
Export Citation:
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Assignee:
SANYO ELECTRIC CO (JP)
KUNII TOSHIE (JP)
MATSUMOTO MITSUHIRO (JP)
International Classes:
C23C16/24; H01L31/04; H01L21/205; H01L27/146
Domestic Patent References:
WO2009119124A12009-10-01
Foreign References:
JPH11251612A1999-09-17
JP2000349321A2000-12-15
JP2004363578A2004-12-24
Other References:
See also references of EP 2458644A4
None
Attorney, Agent or Firm:
Hiroshi Sumiya (JP)
KADOYA HIROSHI (JP)
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