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Title:
PHOTOELECTRIC SENSOR
Document Type and Number:
WIPO Patent Application WO/2018/211905
Kind Code:
A1
Abstract:
A photodiode (PD) has: a light-receiving unit for receiving light; and a light-shielding region provided around the light-receiving unit, the light-shielding region being shielded from light by light-shielding metal layers (M1-1 to M1-4, M2-1, M2-2). Capacitance (C2) is formed in the light-shielding region.

Inventors:
KATO TAICHIRO (JP)
IIJIMA SHINJI (JP)
Application Number:
PCT/JP2018/016176
Publication Date:
November 22, 2018
Filing Date:
April 19, 2018
Export Citation:
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Assignee:
AZBIL CORP (JP)
International Classes:
H01L31/10; H01L31/02
Foreign References:
JP2005051087A2005-02-24
JP2001053331A2001-02-23
JPH118518A1999-01-12
JPH10256841A1998-09-25
JP2011071312A2011-04-07
JP2005209994A2005-08-04
JP2000508836A2000-07-11
US20120201350A12012-08-09
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
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