PHOTOELECTRIC TRANSDUCER AND PRODUCTION METHOD THEREFOR

Title:

PHOTOELECTRIC TRANSDUCER AND PRODUCTION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2012/070562

Kind Code:

A1

Abstract:

Provided is a photoelectric transducer (10), wherein the generation of reverse current is suppressed and the photoelectric conversion efficiency is improved. This photoelectric transducer (10) includes at least a support (1), a conductive layer (2), a photoelectric conversion layer (3), a porous insulating layer (4), a catalytic layer (5), a counter electrode conductive layer (6), and a counter electrode support (8) in this order, and is characterized in that the photoelectric conversion layer (3) includes a porous semiconductor layer containing a semiconductor material, and a photosensitive element adsorbed onto the porous semiconductor layer, a carrier transporting material (9) is filled between the porous insulating layer (4) and the catalytic layer (5), pores are contained in the porous semiconductor layer and the porous insulating layer (4) and are filled with the carrier transporting material (9), and there is no strong binding force obtained by forming a film using a screen printing, an evaporation method, or a sputtering method between the porous insulating layer (4) and the catalytic layer (5).

Inventors:

FUKUI ATSUSHI
OGIYA KEI
MIURA YOSHIYUKI
YAMANAKA RYOSUKE

Application Number:

PCT/JP2011/076886

Publication Date:

May 31, 2012

Filing Date:

November 22, 2011

Export Citation:

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Assignee:

SHARP KK (JP)
FUKUI ATSUSHI
OGIYA KEI
MIURA YOSHIYUKI
YAMANAKA RYOSUKE

International Classes:

H01M14/00; H01L31/04

Domestic Patent References:

WO2004036683A1	2004-04-29
WO2011052731A1	2011-05-05
WO1997016838A1	1997-05-09

Foreign References:

JPH11339866A	1999-12-10
JPH01220380A	1989-09-04
JP2001357897A	2001-12-26

Other References: