Title:
PHOTOEMISSIVE SURFACE AND PHOTODETECTOR USING PHOTOEMISSIVE SURFACE
Document Type and Number:
WIPO Patent Application WO/2001/052297
Kind Code:
A1
Abstract:
A photoemissive surface (10) includes a p-type silicon substrate (11), a porous silicon area (12) formed on the p-type silicon substrate (11), an Au electrode (13) formed on the porous silicon area (12), and an ohmic electrode (14) formed on the p-type silicon substrate (11) on the opposite side of the porous silicon area (12). The photoemissive surface consists of a p-type silicon substrate including a porous silicon area of a new material. ?The use of a p-type silicon substrate prevents cold emission, thus providing a low-noise photoemissive surface.
Inventors:
Koshida, Nobuyoshi (3-12-8, Midori-cho Koganei-shi Tokyo, 184-0003, JP)
Application Number:
PCT/JP2001/000088
Publication Date:
July 19, 2001
Filing Date:
January 11, 2001
Export Citation:
Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Koshida, Nobuyoshi (3-12-8, Midori-cho Koganei-shi Tokyo, 184-0003, JP)
Koshida, Nobuyoshi (3-12-8, Midori-cho Koganei-shi Tokyo, 184-0003, JP)
International Classes:
H01J9/12; G01J1/02; H01J1/34; H01J40/06; H01L31/09; H01J9/12; G01J1/02; H01J1/02; H01J40/00; H01L31/08; (IPC1-7): H01J1/34; H01J1/78; H01J9/12; H01J9/233; H01J40/06
Attorney, Agent or Firm:
Hasegawa, Yoshiki (Soei Patent and Law Firm, Okura-honkan 6-12, Ginza 2-chome Chuo-ku Tokyo, 104-0061, JP)
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