Title:
PHOTOLITHOGRAPHY METHOD BASED ON BILAYER PHOTORESIST
Document Type and Number:
WIPO Patent Application WO/2022/257923
Kind Code:
A1
Abstract:
The present invention relates to a photolithography method based on a bilayer photoresist. The method comprises the following steps: (1) applying a layer of positive-working photoresist on a substrate and drying, and then applying a layer of negative-working photoresist on the positive-working photoresist and drying; (2) exposing the two layers of photoresist under an exposure source by using a photolithography mask carrying a template pattern or by focusing and direct writing, and then drying; (3) developing the negative-working photoresist by using a negative photoresist developing solution; (4) performing controllable development on the positive-working photoresist by using a positive photoresist developing solution; (5) forming a pattern on a substrate material by means of a material deposition technique or an etching technique; and (6) removing the photoresist. Compared with existing single-exposure photolithography technology, the method of the present invention is simple, a line width smaller than that of the conventional technology can be achieved by pattern contouring, and the method can be widely applied to semiconductor processes and has extensive research and application value.
Inventors:
GAO YIJIAO (CN)
Application Number:
PCT/CN2022/097391
Publication Date:
December 15, 2022
Filing Date:
June 07, 2022
Export Citation:
Assignee:
SHANGHAI MICROSTART PHOTOELECTRIC TECH CO LTD (CN)
International Classes:
G03F7/16; G03F7/20; G03F7/30
Foreign References:
| CN101969098A | 2011-02-09 | |||
| CN104199252A | 2014-12-10 | |||
| CN105116685A | 2015-12-02 | |||
| CN110989295A | 2020-04-10 | |||
| JPS61294815A | 1986-12-25 |
Other References:
GUO JING, WU PING: "Introduction of Developing Mechanism of Positive and Negative Photoresist Developing Liquid", DIANZI SHIJIE - ELECTRONICS WORLD, DIANZI SHIJIE ZAZHISHE, CN, no. 19, 15 October 2020 (2020-10-15), CN , pages 150 - 151, XP093012520, ISSN: 1003-0522, DOI: 10.19353/j.cnki.dzsj.2020.19.070
LAI WUXING ͨ¹Ý¸Ä±Ä¹Â¿Ì½º²ÄÁÏΜÄÐÔÖÊ£¬, SHU-ZI: "Comparison of Characteristics of Photoresists in Photoithography Process on Micromachining ", SEMICONDUCTOR TECHNOLOGY, GAI-KAN BIANJIBU, SHIJIAZHUANG, CN, vol. 29, no. 11, 23 November 2004 (2004-11-23), CN , pages 22 - 25, XP093012599, ISSN: 1003-353X, DOI: 10.13290/j.cnki.bdtjs.2004.11.007
LAI WUXING ͨ¹Ý¸Ä±Ä¹Â¿Ì½º²ÄÁÏΜÄÐÔÖÊ£¬, SHU-ZI: "Comparison of Characteristics of Photoresists in Photoithography Process on Micromachining ", SEMICONDUCTOR TECHNOLOGY, GAI-KAN BIANJIBU, SHIJIAZHUANG, CN, vol. 29, no. 11, 23 November 2004 (2004-11-23), CN , pages 22 - 25, XP093012599, ISSN: 1003-353X, DOI: 10.13290/j.cnki.bdtjs.2004.11.007
Attorney, Agent or Firm:
SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC (CN)
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