Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PHOTOMASK CORRECTION DEVICE AND METHOD FOR CORRECTING PHOTOMASK
Document Type and Number:
WIPO Patent Application WO/2022/153793
Kind Code:
A1
Abstract:
A purpose of the present invention is to provide a photomask correction device with which it is possible to smoothly perform a film process so that a deposition film, which is a pattern film of a photomask, has suitable light transmittance. This photomask correction device comprises: measurement illumination units (4, 5) that irradiate illumination light from the front or back surface of a transparent stage (3) simultaneously with the irradiation of a focused ion beam from a focused ion beam device (2) onto a correction region for forming a pattern film or reducing film thickness when a photomask (50) is overlaid on the transparent stage (3); measurement light-receiving parts (6, 7) that are positioned on the other of the front or back surface of the transparent stage (3), receive transmitted light, which is illumination light that has been transmitted through the correction region, and measure the amount of received light; and a control unit (30) that controls the formation or reduction of the mask pattern film in the correction region by the focused ion beam device (2), on the basis of the amount of received light measured by the measurement light-receiving parts (6, 7).

Inventors:
MIZUMURA MICHINOBU (JP)
Application Number:
PCT/JP2021/046943
Publication Date:
July 21, 2022
Filing Date:
December 20, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
V TECH CO LTD (JP)
International Classes:
G03F1/74; H01J37/317
Foreign References:
JPH0315068A1991-01-23
JP2007310162A2007-11-29
JP2008190938A2008-08-21
JPS61194723A1986-08-29
JPH0922110A1997-01-21
JPS58202038A1983-11-25
JP2015034909A2015-02-19
JP2008172000A2008-07-24
JP2006243731A2006-09-14
JPH0316112A1991-01-24
JPH0511436A1993-01-22
JP2011191412A2011-09-29
Attorney, Agent or Firm:
NISSAY INTERNATIONAL PATENT OFFICE (JP)
Download PDF: