Title:
PHOTORESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND ACID GENERATOR
Document Type and Number:
WIPO Patent Application WO/2014/046097
Kind Code:
A1
Abstract:
The present invention is a photoresist composition which contains: a polymer that has a structural unit containing an acid-cleavable group; and an acid generator that contains a compound represented by formula (1). In formula (1), R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1-30 carbon atoms or a substituted or unsubstituted monovalent heterocyclic group having 3-30 ring atoms; R2 represents an alkanediyl group having 1-30 carbon atoms or a fluorinated alkanediyl group having 2-30 carbon atoms, with the number of the fluorine atoms being smaller than the number of the carbon atoms; and Q+ represents a monovalent photodecomposable organic cation.
Inventors:
NII HIROYUKI (JP)
IKEDA NORIHIKO (JP)
NAGAI TOMOKI (JP)
IKEDA NORIHIKO (JP)
NAGAI TOMOKI (JP)
Application Number:
PCT/JP2013/075061
Publication Date:
March 27, 2014
Filing Date:
September 17, 2013
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; C07C309/65; C07C381/12; C07D307/91; C08F20/16; C09K3/00; G03F7/039; H01L21/027
Domestic Patent References:
| WO2011104127A1 | 2011-09-01 |
Foreign References:
| JP2011079778A | 2011-04-21 | |||
| JP2011095700A | 2011-05-12 | |||
| JP2010191015A | 2010-09-02 | |||
| JP2007145803A | 2007-06-14 |
Attorney, Agent or Firm:
AMANO KAZUNORI (JP)
Kazuki Amano (JP)
Kazuki Amano (JP)
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