PHOTORESIST REMOVAL - ADVANCED TECH MATERIALS

Title:

PHOTORESIST REMOVAL

Document Type and Number:

WIPO Patent Application WO2004059700

Kind Code:

A3

Abstract:

Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

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Inventors:

MINSEK DAVID W
MURPHY MELISSA K
BERNHARD DAVID D
BAUM THOMAS H

Application Number:

PCT/US2003/040439

Publication Date:

November 04, 2004

Filing Date:

December 17, 2003

Export Citation:

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Assignee:

ADVANCED TECH MATERIALS (US)

International Classes:

C11D7/06; C11D7/32; C11D7/50; C11D11/00; G03F7/42; H01L21/311; H01L21/306; (IPC1-7): G03C5/00; B08B3/00

Foreign References:

US6599370B2

2003-07-29

Other References: