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Title:
PHOTOSENSITIVE COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2016/088515
Kind Code:
A1
Abstract:
Provided are: a photosensitive composition for forming a resist underlayer film, which exhibits excellent dry etching resistance and heat resistance, while having easily controllable alkali solubility; and a resist underlayer film. Specifically provided is a photosensitive composition for forming a resist underlayer film, which contains a novolac phenolic resin that is obtained by having (A) one or more phenolic trinuclear compounds selected from the group consisting of compounds represented by general formula (1) and compounds represented by general formula (2) react with (B) an aldehyde in the presence of an acid catalyst. (In the formulae, each of R1, R2 and R3 independently represents an optionally substituted alkyl group having 1-8 carbon atoms; R4 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group; each of p and q independently represents an integer of 1-4; r represents an integer of 0-4; and s represents 1 or 2. In this regard, the sum of r and s is 5 or less.)

Inventors:
IMADA TOMOYUKI (JP)
Application Number:
PCT/JP2015/081572
Publication Date:
June 09, 2016
Filing Date:
November 10, 2015
Export Citation:
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Assignee:
DAINIPPON INK & CHEMICALS (JP)
International Classes:
G03F7/11; C07C39/16; C08G8/00; H01L21/027
Domestic Patent References:
WO2014185335A12014-11-20
WO2012141165A12012-10-18
WO2012063636A12012-05-18
WO2014141740A12014-09-18
WO2015141427A12015-09-24
Attorney, Agent or Firm:
KONO MICHIHIRO (JP)
Michihiro Kono (JP)
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