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Title:
PHOTOSENSITIVE DETECTOR WITH COMPOSITE DIELECTRIC GATE MOSFET AND SINGAL READING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2010/094233
Kind Code:
A1
Abstract:
A photosensitive detector with a composite dielectric gate MOSFET is provided. The MOSFET comprises a P-type substrate (11); a source (2a) and a drain (2b) formed in the substrate (11); an underlying dielectric layer (5), a photo-electron storage layer (8), a top dielectric layer (6), and a control gate (7) stacked on the substrate (11) in sequence; wherein, the top dielectric layer (6) can prevent the photoelectrons stored in the photo-electron storage layer (8) from leaking into the control gate (7); a transparent or semi-transparent window for detecting light is formed on at least one of the substrate (11) and the control gate (7); when the photoelectrons are generated and injected into the photo-electron storage layer (8), the source (2a) and the drain (2b) are floating. A method for reading stored information is also provided.

Inventors:
YAN FENG (CN)
ZHANG RONG (CN)
SHI YI (CN)
PU LIN (CN)
XU YUE (CN)
WU FUWEI (CN)
BU XIAOFENG (CN)
XIA HAOGUANG (CN)
Application Number:
PCT/CN2010/070612
Publication Date:
August 26, 2010
Filing Date:
February 10, 2010
Export Citation:
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Assignee:
UNIV NANJING (CN)
YAN FENG (CN)
ZHANG RONG (CN)
SHI YI (CN)
PU LIN (CN)
XU YUE (CN)
WU FUWEI (CN)
BU XIAOFENG (CN)
XIA HAOGUANG (CN)
International Classes:
H01L27/115
Foreign References:
US6784933B12004-08-31
US6348378B12002-02-19
US4893273A1990-01-09
US5147811A1992-09-15
CN101263708A2008-09-10
JPH06215593A1994-08-05
CN101533845A2009-09-16
CN1774814A2006-05-17
CN1156337A1997-08-06
Other References:
CHINESE JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES, vol. 02, 2007
See also references of EP 2400547A4
Attorney, Agent or Firm:
NANJING TIANYI PATENT AGENT CO., LTD (No.118 Chengxian Street Xuanwu Distric, Nanjing Jiangsu 8, CN)
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