Title:
PHOTOSENSITIVE RESIN COMPOSITION AND ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/158416
Kind Code:
A1
Abstract:
[Problem] To provide: a photosensitive resin composition which has excellent resistance to an etching liquid that contains hydrofluoric acid or ammonium fluoride at high concentration; and an etching method which utilizes this photosensitive resin composition.
[Solution] A photosensitive resin composition which is used in an etching method wherein etching is performed by means of an etching liquid that contains hydrofluoric acid or ammonium fluoride, and which contains at least (A) an acid-modified epoxy acrylate, (B) a photopolymerization initiator, (C) a blocked isocyanate compound and (D) a filler; and an etching method wherein a photosensitive resin layer containing this photosensitive resin composition is formed on at least one surface of a base, and after exposing the photosensitive resin layer to light and then developing the photosensitive resin layer, the photosensitive resin layer is heated and then etched by means of an etching liquid that contains hydrofluoric acid or ammonium fluoride.
Inventors:
IRISAWA MUNETOSHI (JP)
GOKAN NORIHIKO (JP)
KAJIYA KUNIHITO (JP)
TOYODA YUJI (JP)
NAKAGAWA KUNIHIRO (JP)
GOKAN NORIHIKO (JP)
KAJIYA KUNIHITO (JP)
TOYODA YUJI (JP)
NAKAGAWA KUNIHIRO (JP)
Application Number:
PCT/JP2016/058318
Publication Date:
October 06, 2016
Filing Date:
March 16, 2016
Export Citation:
Assignee:
MITSUBISHI PAPER MILLS LTD (JP)
International Classes:
G03F7/027; C03C15/00; G03F7/004; G03F7/40
Domestic Patent References:
| WO2006057385A1 | 2006-06-01 |
Foreign References:
| JP2001209175A | 2001-08-03 | |||
| JP2009265389A | 2009-11-12 | |||
| JP2013117682A | 2013-06-13 | |||
| JP2007128052A | 2007-05-24 | |||
| US4451329A | 1984-05-29 |
Other References:
See also references of EP 3279732A4
Attorney, Agent or Firm:
NAKAMURA, SHIZUO (JP)
Shizuo Nakamura (JP)
Shizuo Nakamura (JP)
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