PHOTOSENSOR HAVING 2D-3D HETEROJUNCTION STRUCTURE, AND MANUFACTURING METHOD THEREFOR

Title:

PHOTOSENSOR HAVING 2D-3D HETEROJUNCTION STRUCTURE, AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2022/114394

Kind Code:

A1

Abstract:

Disclosed according to an aspect of the technical concept of the present disclosure is a photosensor comprising: a three-dimensional material layer doped with impurities of a first conductivity type at a first concentration; and a two-dimensional material layer doped with impurities of a second conductivity type at a second concentration, and disposed in contact with the three-dimensional material layer to form a type II band alignment therewith.

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Inventors:

HEO JUNSEOK (KR)
HWANG AUJIN (KR)
PARK YOUNGSEO (KR)

Application Number:

PCT/KR2021/001377

Publication Date:

June 02, 2022

Filing Date:

February 02, 2021

Export Citation:

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Assignee:

UNIV AJOU IND ACADEMIC COOP FOUND (KR)

International Classes:

H01L31/109; H01L31/18

Foreign References:

KR20190127528A	2019-11-13
KR20160020193A	2016-02-23
KR20130006840A	2013-01-18
US20190018116A1	2019-01-17

Other References:

RIAZIMEHR, Sarah et al. Spectral sensitivity of graphene/silicon heterojunction photodetectors. Solid-State Electronics. 16 September 2015, Volume 115, Part B, Pages 207-212. Retrieved from .

Attorney, Agent or Firm:

CHUNG, Sungjoon (KR)

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