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Patent Searching and Data


Title:
PHOTOSENSOR AND SEMICONDUCTOR DEVICE PROVIDED WITH SAID PHOTOSENSOR
Document Type and Number:
WIPO Patent Application WO/2012/011448
Kind Code:
A1
Abstract:
Disclosed is a photosensor that has a novel structure and that can increase photodetection sensitivity across a wide wavelength region including the region of visible light. Further disclosed is a semiconductor device provided with said photosensor. The photosensor is provided with: a first photodiode (16) that is formed on a substrate (20) and that is provided with a diode semiconductor film (22) having an n-type region (26), an intrinsic region (28) and a p-type region (30); and a second photodiode (18) that is formed on the diode semiconductor film (22), is connected in parallel to the first photodiode (16), and is configured containing a semiconductor layer (36) that has an intrinsic layer (40) as well as an n-type layer (38) and/or a p-type layer (42). One of either the intrinsic region (28) or the intrinsic layer (40) is formed from crystalline silicon, and the other of either the intrinsic region (28) or the intrinsic layer (40) is formed from amorphous silicon.

Inventors:
KIYAMA Masashi (())
木山 雅志 (())
Application Number:
JP2011/066261
Publication Date:
January 26, 2012
Filing Date:
July 15, 2011
Export Citation:
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Assignee:
SHARP KABUSHIKI KAISHA (22-22, Nagaike-cho Abeno-ku, Osaka-sh, Osaka 22, 〒5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町22番22号 Osaka, 〒5458522, JP)
KIYAMA Masashi (())
International Classes:
H01L31/10; H01L27/146
Attorney, Agent or Firm:
KAWAKAMI Keiko et al. (Intelix International, Aqua Dojima West4-16, Dojimahama 1-chome, Kita-k, Osaka-shi Osaka 04, 〒5300004, JP)
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Claims: