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Patent Searching and Data


Title:
PHOTOSENSOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/163347
Kind Code:
A1
Abstract:
To stabilize the characteristics of a TFT of a photosensor substrate so as to achieve further improvement of the sensor performance. This photosensor substrate is provided with a substrate 7, a photoelectric conversion element 4 and a transistor 2. The transistor 2 comprises: a semiconductor layer 22; a drain electrode 23 and a source electrode 21, which face each other in a direction parallel to the surface of the substrate, with the semiconductor layer 22 being interposed therebetween; a gate insulating film 15 which covers the semiconductor layer 22, the drain electrode 23 and the source electrode 21; and a gate electrode 24 which faces the semiconductor layer 22, with the gate insulating film 15 being interposed therebetween. The photoelectric conversion element 4 comprises: a lower electrode 41 which is connected to the drain electrode 23 through a contact hole CH1 of the gate insulating film 15; a semiconductor film 42; and an upper electrode 43.

Inventors:
MIYAMOTO TADAYOSHI
Application Number:
PCT/JP2016/061082
Publication Date:
October 13, 2016
Filing Date:
April 05, 2016
Export Citation:
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Assignee:
SHARP KK (JP)
International Classes:
G01T7/00; H01L27/146; H01L21/336; H01L27/144; H01L29/786; H04N5/369; H01L31/10
Domestic Patent References:
WO2015141777A12015-09-24
WO2016021472A12016-02-11
Foreign References:
JP2002217206A2002-08-02
JPH11125841A1999-05-11
JP2010003766A2010-01-07
JP2002353140A2002-12-06
JP2013021315A2013-01-31
Attorney, Agent or Firm:
KAWAKAMI Keiko et al. (JP)
Keiko Kawakami (JP)
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