Title:
PHOTOVOLTAIC DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/168515
Kind Code:
A1
Abstract:
A photovoltaic device (10) is provided with a photovoltaic layer (3) formed by laminating, in order, a p-type semiconductor layer (31), an i-type semiconductor layer (32), and an n-type semiconductor layer (33). The p-type semiconductor layer (31) comprises p-type thin silicon films (311 to 313). The p-type thin silicon films (311 and 312) use pulse power created by superimposing low-frequency pulse power from 100 Hz to 1 kHz on high-frequency power from 1 MHz and 50 MHz as plasma excitation power. The density of the high-frequency power is 100 to 300 mW/cm2, and the pressure during plasma processing is 300 to 600 Pa. Under conditions in which the substrate temperature during plasma processing is 140 to 190°C, thin silicon film having p-type conductivity is deposited, and thin silicon film is formed through nitriding. The p-type thin silicon film (313) is deposited under the abovementioned conditions.
Inventors:
NISHIMURA KAZUHITO
NASUNO YOSHIYUKI
HONDA SHINYA
YAMADA TAKASHI
NASUNO YOSHIYUKI
HONDA SHINYA
YAMADA TAKASHI
Application Number:
PCT/JP2013/061165
Publication Date:
November 14, 2013
Filing Date:
April 15, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L31/04
Foreign References:
| JPS6384075A | 1988-04-14 | |||
| JP2004296776A | 2004-10-21 | |||
| JP2010177264A | 2010-08-12 | |||
| JP2012216640A | 2012-11-08 |
Attorney, Agent or Firm:
KAWAKAMI Keiko et al. (JP)
Keiko Kawakami (JP)
Keiko Kawakami (JP)
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