Title:
PHOTOVOLTAIC ELEMENT AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2014/148443
Kind Code:
A1
Abstract:
Provided are a photovoltaic element and a manufacturing method therefor wherein, without using any organic solvents that are harmful to humans, pyramid-shaped irregularities are etched into a silicon substrate so as to increase the generating efficiency of said photovoltaic element. Said photovoltaic element (10) is provided with the following: a silicon substrate (11), the surface of which has a large number of pyramid-shaped irregularities formed thereon via anisotropic etching; and amorphous silicon thin films (12 through 15) formed on top of the pyramid-shaped irregularities via chemical vapor deposition. The etching conditions are selected such that the mean length of the diagonals of the pyramids that form the pyramid-shaped irregularities, as defined by the following equation, is less than 5 µm.
Mean length of diagonals = (2 × surface area in field of view / number of pyramid apexes in field of view)0.5
Inventors:
KOBAYASHI EIJI (JP)
Application Number:
PCT/JP2014/057189
Publication Date:
September 25, 2014
Filing Date:
March 17, 2014
Export Citation:
Assignee:
CHOSHU INDUSTRY CO LTD (JP)
International Classes:
H01L31/0236; H01L31/0747; H01L31/18
Domestic Patent References:
WO1998043304A1 | 1998-10-01 | |||
WO1998043304A1 | 1998-10-01 |
Foreign References:
US20110174371A1 | 2011-07-21 | |||
JP2007294830A | 2007-11-08 | |||
JP2012064839A | 2012-03-29 | |||
JPH07142753A | 1995-06-02 | |||
JP2009164625A | 2009-07-23 | |||
JP2011515872A | 2011-05-19 | |||
JP2010074102A | 2010-04-02 | |||
JP2010074102A | 2010-04-02 | |||
JP2009206335A | 2009-09-10 | |||
JP2012227304A | 2012-11-15 | |||
JP2005536894A | 2005-12-02 |
Other References:
SARA OLIBET ET AL., PHYS. STATUS SOLIDI A, 2010, pages 1 - 6
See also references of EP 2978026A4
See also references of EP 2978026A4
Attorney, Agent or Firm:
NAKAMAE Fujio et al. (JP)
Fujio Nakamae (JP)
Fujio Nakamae (JP)
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