Title:
PHYSICAL VAPOR-DEPOSITION TARGET MEMBER AND SPUTTERING TARGET MEMBER, AND PHYSICAL VAPOR-DEPOSITION FILM AND LAYER STRUCTURE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/096992
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a physical vapor-deposition target member that has low deterioration of a foundation layer due to oxidation during formation of a physical vapor-deposition film, that produces few defects in a joining section between the physical vapor-deposition film and the foundation layer, that has good lattice regularity of the physical vapor-deposition film and the foundation layer, and that causes little alteration due to hydration of the physical vapor-deposition target member itself and the physical vapor-deposition film formed. The physical vapor-deposition target member comprises Mg, M (where M is a trivalent metal element), and O as principal constituents, and the molar ratios of Mg and M, when converted to MgO and M2O3
oxides, respectively, are in the range 70:30 to 10:90.
Inventors:
KUBO HIROAKI (JP)
KAWABE KOHEI (JP)
MITANI ATSUYUKI (JP)
YOKOYAMA SOUSUKE (JP)
TAKASU MASANOBU (JP)
KAWABE KOHEI (JP)
MITANI ATSUYUKI (JP)
YOKOYAMA SOUSUKE (JP)
TAKASU MASANOBU (JP)
Application Number:
PCT/JP2017/041030
Publication Date:
May 31, 2018
Filing Date:
November 15, 2017
Export Citation:
Assignee:
UBE MAT IND LTD (JP)
NIPPON TUNGSTEN (JP)
NIPPON TUNGSTEN (JP)
International Classes:
C23C14/34; C23C14/08; H01L43/08; H01L43/10; H01L43/12
Domestic Patent References:
| WO2012173108A1 | 2012-12-20 | |||
| WO2012056808A1 | 2012-05-03 |
Foreign References:
| JP2011202268A | 2011-10-13 |
Other References:
BELMOUBARIK, M. ET AL.: "MgA1204 (001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target", APPLIED PHYSICS LETTERS, vol. 108, no. 13, March 2016 (2016-03-01), pages 132404/1 - 132404/5, XP012206382, DOI: doi:10.1063/1.4945049
TSUNODA, MASAKIYO ET AL.: "Fabrication of MgA1204 tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe4N ferromagnetic electrode", JOURNAL OF APPLIED PHYSICS, vol. 117, no. 17, 2015, pages 17D703/1 - 17D703/4, XP055504641
TSUNODA, MASAKIYO ET AL.: "Fabrication of MgA1204 tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe4N ferromagnetic electrode", JOURNAL OF APPLIED PHYSICS, vol. 117, no. 17, 2015, pages 17D703/1 - 17D703/4, XP055504641
Attorney, Agent or Firm:
INOUE Hajime et al. (JP)
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